transient voltage suppressors array for esd protection low capacitance revision january 06, 2014 1 / 3 @ un semiconductor co., ltd. 2014 specifications are subject to change without notice. please refer to www.unsemi.com.tw for current information. esdxxv08s-4l series un semiconductor co.,ltd. www.unsemi.com.tw so-08 the esdxxv08s-4l is in an so-08 package and may be used to protect two high-speed line pairs. the flow-thru design minimizes trace inductance and reduces voltage overshoot associated with esd events. the low clamping voltage of the esdxxv08s-4l minimizes the stress on the protected ic. u 500 watts peak pulse power per line (tp=8/20 s) u protects four high speed i/o lines u low capacitance (5pf) for high-speed interfaces u low clamping and operating voltage u rohs compliant u iec61000-4-2 (esd) 15kv (air), 8kv (contact) u iec61000-4-4 (eft) 40a (5/50 s) u iec61000-4-5 (lightning) 24a (8/20 s) u usb power and data line protection u t1/e1 secondary ic side protection u t3/e3 secondary ic side protection u hdsl, sdsl secondary ic side protection u video line protection u microcontroller input protection u base stations u i 2 c bus protection u jedec so-08 package u molding compound flammability rating : ul 94v-0 u weight 70 milligrams (approximate) u quantity per reel : 2,500pcs u reel size : 13 inch u lead finish : lead free symbol parameter value units p pp peak pulse power (tp=8/20 s waveform) 500 w t l lead soldering temperature 260 (10sec) o c t stg storage temperature range -55 to +150 o c t j operating temperature range -55 to +150 o c air discharge 15 iec61000-4-2 (esd) contact discharge 8 kv iec61000-4-4 (eft) 40 a iec61000-4-5 ( lightning ) 24 a mechanical characteristics d escription feature func tional diagram applications m echanical characteristics
transient voltage suppressors array for esd protection low capacitance revision january 06, 2014 2 / 3 @ un semiconductor co., ltd. 2014 specifications are subject to change without notice. please refer to www.unsemi.com.tw for current information. esdxxv08s-4l series un semiconductor co.,ltd. www.unsemi.com.tw v c part number device marking v rwm (v) (max.) v b (v) (min.) i t (ma) v c @5 a (max.) (max.) (@a) i r ( a) (max.) c (pf) (typ.) esd3.3v08s-4l srda 3.3-4 3.3 4 1 6.5 15.5 27 40 5 esd05v08s-4l srda 05-4 5 6 1 9.8 19 24 5 5 esd12v08s-4l srda 12-4 12 13.3 1 19 29 18 1 5 esd15v08s-4l srda 15-4 15 16.7 1 24 32 15 1 5 fig1. 8/20 s pulse waveform fig2. esd pulse waveform (according to iec 61000-4-2) fig3. power derating curve electrical characteristics ( @ 25 unless otherwise specified ) characteristic curves 0 5 10 15 20 25 30 120 t r 100 80 60 40 20 0 peak value i pp t d =t i pp /2 test waveform parameters t r =8 s t d =20 s t - time ( s ) i pp - peak pulse current - % of i pp 60ns 10% percent of peak pulse current % 30ns tr = 0.7~1ns time (ns) 90% 100% 0 2 5 50 7 5 100 125 150 175 110 100 40 30 20 10 0 % of rated power or i pp 90 80 70 60 50 ambient temperature C t a ( o c )
transient voltage suppressors array for esd protection low capacitance revision january 06, 2014 3 / 3 @ un semiconductor co., ltd. 2014 specifications are subject to change without notice. please refer to www.unsemi.com.tw for current information. esdxxv08s-4l series un semiconductor co.,ltd. www.unsemi.com.tw fig4. esd clamping (+8kv contac per iec61000-4-2) fig5. esd clamping (-8kv contac per iec61000-4-2) millimeters inches dim min max min max a 4.80 5.00 0.189 0.197 b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.053 0.069 d 0.35 0.51 0.013 0.020 g 1.27bsc 0.050bsc h 0.10 0.25 0.004 0.010 j 0.19 0.25 0.007 0.010 k 0.40 1.27 0.016 0.050 m 0 8 0 8 n 0.25 0.50 0.010 0.020 s 5.80 6.20 0.228 0.244 characteristic curves so - 08 package outline & dimensions soldering footprint
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